e-Περιοδικό Επιστήμης & Τεχνολογίας

e-Journal of Science & Technology, (e-JST)

 

Study the Analysis of Low power and High speed CMOS Logic Circuits in 90nm Technology

 

Fazal Noorbasha1, Ashish Verma1 and A.M. Mahajan2

 

1. Laboratory of VLSI and Embedded Systems, Deptt. Of Physics and Electronics,

Dr. Hari Singh Gour University, Sagar, M.P.-INDIA

 2. Deptt. Of Electronics, North Maharashtra University, Jalgaon-M.S.-INDIA

E-Mail: skfazalahmed@rediffmail.com

 

 

Abstract

   This paper describes the parameter and characteristic analysis of Low power and High speed CMOS Logic Circuits in 90nm Technology. The proposed CMOS logic circuits consists only logic gates. CMOS circuit is fabricated in 0.12΅m and 90nm CMOS technology. The supply voltage is 1.20V. The temperature was 27ºC. We observed Inverter (NOT gate) properties - MOS, Capacitance, Resistance, Inductance and Clock. These layouts can store in the form of semi-custom library to make full-custom SoC designs. 

 

Key words: Low power, High speed, CMOS, Inverter and 90nm technology.

 

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